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DMN3005LK3
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
* * * * * * * * Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
* * * * * * Case: TO252-3L Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (approximate)
D
D
G
D G
TOP VIEW
S
S
Equivalent Circuit
PIN OUT -TOP VIEW
Ordering Information (Note 3)
Part Number DMN3005LK3-13
Notes:
Case TO252-3L
Packaging 2500 / Tape & Reel
1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
N3005L
YYWW
= Manufacturer's Marking N3005L = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01 - 53)
DMN3005LK3
Document number: DS33318 Rev. 2 - 2
1 of 6 www.diodes.com
October 2010
(c) Diodes Incorporated
DMN3005LK3
Maximum Ratings @TA = 25C unless otherwise specified
Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) VGS = 10V Continuous Drain Current (Note 5) VGS = 10V Pulsed Drain Current (Note 6) Steady State Steady State TA = 25C TA = 85C TA = 25C TA = 85C Symbol VDSS VGSS ID ID IDM Value 30 20 14.5 10.5 22 16 48 Unit V V A A A
Thermal Characteristics
Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient @TA = 25C (Note 4) Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = 25C (Note 5) Operating and Storage Temperature Range Symbol PD RJA PD RJA TJ, TSTG Value 1.68 74.3 4.1 30.8 -55 to +150 Unit W C/W W C/W C
Electrical Characteristics @TA = 25C unless otherwise specified
Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
Notes:
Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| VSD Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf
Min 30 1.0 -
Typ 1.5 3.6 4.9 22 0.8 4342 1801 669 1.76 46.9 14.3 18.6 7.9 22.8 73.4 43.5
Max 1.0 100 2.0 5.0 6.5 1.0 -
Unit V A nA V m S V pF pF pF nC nC nC ns ns ns ns
Test Condition VGS = 0V, ID = 250A VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 20A VGS = 4.5V, ID = 20A VDS = 15V, ID = 15A VGS = 0V, IS = 20A
VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 15V, ID = 15A
VDS = 15V, VGS = 10V, RL = 1.3 RG = 3
4. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided. 5. Device mounted on 2" x 2" FR-4 PCB with high coverage 2oz. copper, single sided. 6. Repetitive rating, pulse width limited by junction temperature and current limited by package. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing.
DMN3005LK3
Document number: DS33318 Rev. 2 - 2
2 of 6 www.diodes.com
October 2010
(c) Diodes Incorporated
DMN3005LK3
50
VGS = 4.5V
30
VDS = 5.0V
40
VGS = 3.5V
25 ID, DRAIN CURRENT(A)
ID, DRAIN CURRENT (A)
VGS = 3.0V VGS = 2.8V
20
30
VGS = 2.5V
15
TA = 150C TA = 125C
20
10
TA = 85C
TA = 25C T A = -55C
10
VGS = 1.8V
5
VGS = 2.0V
0
0
2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig.1 Typical Output Characteristics
1
5
0
0
0.5 1 1.5 2 2.5 3 3.5 VGS, GATE SOURCE VOLTAGE(V) Fig. 2 Typical Transfer Characteristics
4
RDS(on), DRAIN-SOURCE ON-RESISTANCE ()
0.036 0.032 0.028 0.024 0.020 0.016 0.012 0.008 0.004 0
VGS = 4.5V VGS = 2.5V
RDS(on) DRAIN SOURCE ON-RESISTANCE ()
0.040
0.012
VGS = 4.5V
0.010
0.008
TA = 150C TA = 125C TA = 85C
0.006
0.004
T A = 25C TA = -55C
0.002
0
5
10 15 20 25 ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage
30
0
0
10 15 20 25 30 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature
5
0.010 0.009 RDS(ON), DRAIN-TO-SOURCE RESISTANCE () 0.008 0.007 0.006 0.005 0.004 0.003 0.002 0.001 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature
VGS = 4.5A ID = 20A
1.0 VGS(TH), GATE THRESHOLD VOLTAGE (V)
0.8
0.6
ID = 1mA
0.4
ID = 250A
0.2
0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 6 Gate Threshold Variation vs. Ambient Temperature
0 -50
-25
DMN3005LK3
Document number: DS33318 Rev. 2 - 2
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October 2010
(c) Diodes Incorporated
DMN3005LK3
20 18 16 IS, SOURCE CURRENT (A) 14 12 10 8 6 4 2 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Diode Forward Voltage vs. Current 1.2
T A = 25C
10,000
f = 1MHz
Ciss
C, CAPACITANCE (pF)
C oss
1,000
C rss
100 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 8 Typical Capacitance 30
1,000,000
IDSS, LEAKAGE CURRENT (nA)
100,000
T A = 150C
10,000
TA = 125C
1,000
100
TA = 85C
10 1
TA = 25C
5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Drain-Source Leakage Current vs Voltage
1 r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7 D = 0.5 D = 0.3
0
0.1
D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 76C/W P(pk)
D = 0.02
0.01
D = 0.01 D = 0.005
t1
t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1/t2
D = Single Pulse
0.001 0.00001
0.0001
0.001
0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 10 Transient Thermal Response
10
100
1,000
DMN3005LK3
Document number: DS33318 Rev. 2 - 2
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October 2010
(c) Diodes Incorporated
DMN3005LK3
Package Outline Dimensions
E b3
L3
D
b2 b
e
L4 A1 H A
a L SEATING PLANE C2
TO252-3L Dim Min Typ Max A 2.19 2.29 2.39 A1 0.97 1.07 1.17 b 0.64 0.76 0.88 b2 0.76 0.95 1.14 b3 5.21 5.33 5.50 C2 0.45 0.51 0.58 D 6.00 6.10 6.20 E 6.45 6.58 6.70 e 2.286 Typ. H 9.40 9.91 10.41 L 1.40 1.59 1.78 L3 0.88 1.08 1.27 L4 0.64 0.83 1.02 a 0 10 All Dimensions in mm
Suggested Pad Layout
X2
Y2 C Y1 Z
Dimensions Z X1 X2 Y1 Y2 C E1
Value (in mm) 11.6 1.5 7.0 2.5 7.0 6.9 2.3
X1
E1
DMN3005LK3
Document number: DS33318 Rev. 2 - 2
5 of 6 www.diodes.com
October 2010
(c) Diodes Incorporated
DMN3005LK3
IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2010, Diodes Incorporated www.diodes.com
DMN3005LK3
Document number: DS33318 Rev. 2 - 2
6 of 6 www.diodes.com
October 2010
(c) Diodes Incorporated

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